Tutorial 12 — Semiconductors & Electronics
Course: FAD1022 Basic Physics 2
Semester: 2 2025/2026
Centre: Centre for Foundation Studies in Science, Universiti Malaya (PASUM)
Question 1
Sketch the equivalent circuit and determine the current, I for the configurations (a) and (b).
(a) Germanium (Ge) diode with 200 Ω resistor and 5 V supply
(b) Silicon (Si) diode with Germanium (Ge) diode, 250 Ω resistor and 10 V supply
Answers:
- (a) 0.485 A
- (b) 0.02 A
Question 2
Two Ge diodes and one Si diode both in forward bias configurations are connected in series to a 10 V direct current power supply, a 20 Ω and a 30 Ω resistors.
Sketch the circuit and determine:
- Voltage across the 20 Ω resistor — ans: 3.48 V
- Current passing through the 20 Ω resistor — ans: 0.174 A
Question 3
Given two different half-wave rectifier circuits:
Circuit A:
- A 15 V peak AC source connected to a silicon diode oriented to conduct only during the positive cycle
Circuit B:
- A 15 V peak AC source connected to a silicon diode oriented to conduct only during the negative cycle
For both circuits:
a) Sketch the output waveform b) Calculate the peak output voltage, $V_o$ c) Calculate the average DC output voltage
Answers:
- ii) $V_o = 14.3 \text{ V}$ for both circuits
- iii) $V_{DC} = 4.547 \text{ V}$ (Circuit A), $V_{DC} = -4.547 \text{ V}$ (Circuit B)
Question 4
For the network below in Figure 4, determine:
Circuit parameters:
- $V_{CC} = 25 \text{ V}$
- $R_B = 500 \text{ k}\Omega$
- $R_C = 3 \text{ k}\Omega$
- $\beta = 100$
Calculate:
a) Base current, $I_B$ — ans: 48.6 μA b) Collector current, $I_C$ — ans: 4.86 mA c) Collector-emitter voltage, $V_{CE}$ — ans: 10.42 V d) Collector current, $I_C$ if $\beta = 40$ — ans: 1.944 mA e) Collector current, $I_C$ at saturation level — ans: 8.33 mA
Question 5
Given $I_E = 1.0 \text{ mA}$ and $V_{CE} = 10.0 \text{ V}$ for the network in Figure 5.
Circuit parameters:
- $I_B = 20 \text{ μA}$
- $R_C = 5.0 \text{ k}\Omega$
- $R_E = 0.9 \text{ k}\Omega$
Determine:
a) $\beta$ — ans: 49 b) $V_{CC}$ — ans: 15.8 V c) $R_B$ — ans: 710 kΩ
Additional Questions
Question A1
Sketch output waveform for the network below:
- 6 V supply
- Ge diode
- Si diode
Question A2
For network Fig. 1, given $I_B = 50 \text{ μA}$, $I_E = 8 \text{ mA}$ and $V_{CE} = 12 \text{ V}$.
Determine:
a) $I_C$ — ans: 7.95 mA b) $V_{CC}$ — ans: 51.75 V c) $\beta$ — ans: 159 d) $R_B$ — ans: 1021 kΩ @ 1.021 MΩ
Related Concepts
- Semiconductors & Diodes
- Transistors & Biasing
- Semiconductor
- PN Junction
- Diode
- Forward Bias
- Reverse Bias
- Half-Wave Rectifier
- Full-Wave Rectifier
- BJT
- Transistor
- Current Gain ($\beta$)
- Base Current ($I_B$)
- Collector Current ($I_C$)
- Emitter Current ($I_E$)
- Cutoff
- Saturation
- Active Region